Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

被引：1
作者：
Osinnykh, I. V. [1 ,2 ]
Malin, T. V. [1 ]
Zhuravlev, K. S. [1 ,2 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, 13 Lavrentieva Ave, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, 2 Pirogova Str, Novosibirsk 630090, Russia
来源：
19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2018年 / 993卷
关键词：
SI; DONORS; GAN;
D O I：
10.1088/1742-6596/993/1/012006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGa1-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.
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页数：6
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