High performance silicon LDMOS technology for 2GHz RF power amplifier applications.

被引：68

作者：

Wood, A

Dragon, C

Burger, W

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structure, device processing and performance of a 2GHz, 60Watt silicon LDMOS RF power transistor are described. At 2GHz with a 26Vdc drain operating voltage this device has 1dB power gain compression at 63 Watts CW and 44% drain efficiency. Under two-tone test conditions, at 60 Watts peak output, 11.2dB power gain is realized with less than -30dBc intermodulation distortion and greater than 30% drain efficiency. Excellent linearity is maintained over a wide dynamic range.

引用

页码：87 / 90

页数：4