Future challenges for cleaning in advanced microelectronics

被引：4

作者：

Bowling, A ^{[1
]}

Kirkpatrick, B ^{[1
]}

Hurd, T ^{[1
]}

Losey, L ^{[1
]}

Matz, P ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75265 USA

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES V | 2003年 / 92卷

关键词：

silicon wafer cleaning; surface preparation; single-wafer cleaning; clustered cleaning; porous-low-K cleaning; new materials cross-contamination control;

D O I：

10.4028/www.scientific.net/SSP.92.1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Wafer cleaning and surface preparation have always been very important in achieving high yields in semiconductor manufacturing. With the continued scaling of devices below 100 nm. and the proliferation of new materials in advanced devices, wafer cleaning and surface preparation will have an even greater impact in the future. This paper will focus on the challenges for wafer cleaning and surface preparation for the next silicon CMOS technology nodes.

引用

页码：1 / 6

页数：6