Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

被引：14

作者：

Gocalinska, A. ^{[1
]}

Rubini, S. ^{[2
]}

Pelucchi, E. ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst Lee Maltings, Cork, Ireland

[2] IOM CNR Lab TASC, SS 14 Km 163-5, I-34149 Trieste, Italy

来源：

APPLIED SURFACE SCIENCE | 2016年 / 383卷

基金：

爱尔兰科学基金会;

关键词：

Hydrophobic surface; InP; GaAs; XPS; MOVPE; RAY-PHOTOELECTRON-SPECTROSCOPY; GROWTH; LAYERS; FORCE;

D O I：

10.1016/j.apsusc.2016.04.153

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：19 / 27

页数：9

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