The Fluid Flow Effect on the Inlet Injection of the Thin Film Deposition in a Square Type Atomic Layer Deposition Reactor

被引:3
|
作者
Coetzee, Rigardt Alfred Maarten [1 ]
Lu, Hong-Liang [2 ]
Jen, Tien-Chien [1 ]
机构
[1] Univ Johannesburg, ZA-2006 Johannesburg, South Africa
[2] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源
2ND INTERNATIONAL CONFERENCE ON SUSTAINABLE MATERIALS PROCESSING AND MANUFACTURING (SMPM 2019) | 2019年 / 35卷
基金
新加坡国家研究基金会;
关键词
Nanotechnology; atomic layer deposition; computational fluid dynamics; backward facing step flow; thin film; BACKWARD-FACING STEP; SIMULATION;
D O I
10.1016/j.promfg.2019.06.002
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
In recent years, industry is ever striving to deposit optimal thin films on nano devices. This strive led to interest in utilizing advance nano-manufacturing techniques that can fabricate ever-decreasing scale products along with films that provide highly uniform, conformal, and pin-hole-free quality thin films. Atomic layer deposition provides a technique that fulfil these requirements. However, the understanding of the deposition process within the fabrication of these thin films are still greatly not well-known. The fluid flow patterns and distributions within the atomic layer deposition reactors are rarely investigated and lacks the fluid flow effect incorporated along with the deposition process near the substrate. Per se, these effects due to the geometrical effect of the inlet injection location from the deposited substrate of a square type Gemstar Reactor is investigated. The fmdings reveal the inlet flow effect, near substrate flow behavior, and optimal selection for the deposition of aluminium oxide (Al2O3) thin film. The study simulates the fluid flow properties along with the chemical kinetics by applying computational fluid dynamics incorporated within ANSYS Fluent Software. The flow and surface reaction of Trimethylaluminium and Ozone as precursors, and Argon as the purging gas, are incorporated within the atomic layer deposition sequence. The findings reveal close similarities to that of previous literature. (C) 2019 The Authors. Published by Elsevier B.V. Peer-review under responsibility of the organizing committee of SMPM 2019.
引用
收藏
页码:223 / 228
页数:6
相关论文
共 50 条
  • [1] The mechanistic effect over the substrate in a square type atomic layer deposition reactor
    Coetzee, Rigardt Alfred Maarten
    Jen, Tien-Chien
    Bhamjee, Muaaz
    Lu, Junling
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2019, 33 (1-3):
  • [2] THE TOPOLOGY WITHIN RECIRCULATING FLOW IN THE ATOMIC LAYER DEPOSITION THIN FILM PROCESS
    Coetzee, Rigardt Alfred Maarten
    Hoenselaar, Damon James
    Bhamjee, Muaaz
    Jen, Tien-Chien
    PROCEEDINGS OF THE ASME 2020 INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, IMECE2020, VOL 2A, 2020,
  • [3] Influence of reactive surface groups on the deposition of oxides thin film by atomic layer deposition
    Edy, Riyanto
    Huang, Gaoshan
    Zhao, Yuting
    Guo, Ying
    Zhang, Jing
    Mei, Yongfeng
    Shi, Jianjun
    SURFACE & COATINGS TECHNOLOGY, 2017, 329 : 149 - 154
  • [4] Investigating the Purge Flow Rate in a Reactor Scale Simulation of an Atomic Layer Deposition Process
    Nwanna, Emeka Charles
    Coetzee, Rigardt Alfred Maarten
    Jen, Tien-Chien
    PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, 2019, VOL 2B, 2019,
  • [5] Atomic layer deposition and other thin film deposition techniques: from principles to film properties
    Oke, James A.
    Jen, Tien-Chien
    JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, 21 : 2481 - 2514
  • [6] Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
    熊玉卿
    高恒蛟
    任妮
    刘忠伟
    Plasma Science and Technology, 2018, 20 (03) : 150 - 154
  • [7] Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
    Xiong, Yuqing
    Gao, Hengjiao
    Ren, Ni
    Liu, Zhongwei
    PLASMA SCIENCE & TECHNOLOGY, 2018, 20 (03)
  • [8] The application of atomic layer deposition for transparent thin film transistor
    Lim, S. J.
    Kwon, Soonju
    Kim, H.
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 634 - 635
  • [9] Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition
    Zhang, Jie
    Zheng, Dongqi
    Zhang, Zhuocheng
    Charnas, Adam
    Lin, Zehao
    Ye, Peide D. D.
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 273 - 276
  • [10] THE MECHANISTIC PROCESS COMPARISON BETWEEN A NOVEL SLOTTED INJECTION MANIFOLD VERSUS THE MULTIPLE INJECTION MANIFOLD OF A LOW PRESSURE SQUARE TYPE ATOMIC LAYER DEPOSITION REACTOR
    Coetzee, Rigardt Alfred Maarten
    Jen, Tien-Chien
    PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, 2018, VOL 2, 2019,