Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

被引：269

作者：

Cui, Xu ^{[1
]}

Shih, En-Min ^{[2
]}

Jauregui, Luis A. ^{[3
]}

Chae, Sang Hoon ^{[1
]}

Kim, Young Duck ^{[1
,4
,5
]}

Li, Baichang ^{[1
]}

Seo, Dongjea ^{[6
]}

Pistunova, Kateryna ^{[3
]}

Yin, Jun ^{[7
]}

Park, Ji-Hoon ^{[8
,9
]}

Choi, Heon-Jin ^{[6
]}

Lee, Young Hee ^{[8
,9
]}

Watanabe, Kenji ^{[10
]}

Taniguchi, Takashi ^{[10
]}

Kim, Philip ^{[3
]}

Dean, Cory R. ^{[2
]}

Hone, James C. ^{[1
]}

机构：

[1] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[4] Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea

[5] Kyung Hee Univ, Ctr Humanities & Sci, Seoul 02447, South Korea

[6] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[7] Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Jiangsu, Peoples R China

[8] IBS, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea

[9] Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea

[10] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

NANO LETTERS | 2017年 / 17卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Work-function; tunneling contact; monolayer MoS2; low temperature; SCHOTTKY-BARRIER REDUCTION; FIELD-EFFECT TRANSISTORS; SINGLE-LAYER MOS2; TRANSPORT; GRAPHENE; TRANSITION; EXCITONS; WSE2;

D O I：

10.1021/acs.nanolett.7b01536

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 k Omega.mu m at a carrier density of 5.3 x 10(12)/cm(2). This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

引用

页码：4781 / 4786

页数：6

共 46 条

[21] Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2 [J].