Implementation of Short-Term Plasticity and Long-Term Potentiation in a Synapse Using Si-Based Type of Charge-Trap Memory

被引：27

作者：

Lee, Myoung-Sun ^{[1
,2
]}

Lee, Ju-Wan ^{[3
]}

Kim, Change-Hee ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[3] Samsung Elect Co Ltd, Flash Proc Architecture Team, Hwasung 445701, Gyeonggi, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期

关键词：

Al2O3/HfO2/Si3N4 (A/H/N); long-term potentiation (LTP); neuromorphic system; short-term plasticity (STP); synapse; DEVICE;

D O I：

10.1109/TED.2014.2378758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel silicon-based type of charge-trap memory using Al/HfO2/Al2O3/Si3N4/Si structure mimicking memory functions in a biological synapse. The quantity of the trapped charge in the proposed Al2O3/HfO2/Si3N4 stack is estimated by measuring the capacitance over time, which can be regarded as synaptic weight changes. By applying repeated voltage pulses at periodic intervals of different times, reliable short-term plasticity and long-term potentiation properties are obtained along with their transition behavior. This architecture is compatible with the CMOS process and shows great promise as an essential part for the implementation of an electrical neuromorphic system.

引用

页码：569 / 573

页数：5

共 15 条

[1] Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks [J].

Castan, H. ;

Duenas, S. ;

Garcia, H. ;

Gomez, A. ;

Bailon, L. ;

Toledano-Luque, M. ;

del Prado, A. ;

Martil, I. ;

Gonzalez-Diaz, G. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)

[2] Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor [J].

Chang, Ting ;

Jo, Sung-Hyun ;

Lu, Wei .

ACS NANO, 2011, 5 (09) :7669-7676

[3] A single-transistor silicon synapse [J].

Diorio, C ;

Hasler, P ;

Minch, A ;

Mead, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) :1972-1980

[4] Charge detrapping in HfO2 high-κ gate dielectric stacks [J].

Gusev, EP ;

D'Emic, CP .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5223-5225

[5] Nanoscale Memristor Device as Synapse in Neuromorphic Systems [J].

Jo, Sung Hyun ;

Chang, Ting ;

Ebong, Idongesit ;

Bhadviya, Bhavitavya B. ;

Mazumder, Pinaki ;

Lu, Wei .

NANO LETTERS, 2010, 10 (04) :1297-1301

[6] A QUANTITATIVE DESCRIPTION OF STIMULATION-INDUCED CHANGES IN TRANSMITTER RELEASE AT THE FROG NEUROMUSCULAR-JUNCTION [J].

MAGLEBY, KL ;

ZENGEL, JE .

JOURNAL OF GENERAL PHYSIOLOGY, 1982, 80 (04) :613-638

[7] A frequency-dependent switch from inhibition to excitation in a hippocampal unitary circuit [J].

Mori, M ;

Abegg, MH ;

Gähwiler, BH ;

Gerber, U .

NATURE, 2004, 431 (7007) :453-456

[8] Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks [J].

Nishitani, Y. ;

Kaneko, Y. ;

Ueda, M. ;

Morie, T. ;

Fujii, E. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (12)

[9]

Ohno T, 2011, NAT MATER, V10, P591, DOI [10.1038/NMAT3054, 10.1038/nmat3054]

[10]

Spiga Sabina, 2010, ESSDERC 2010 - 40th European Solid State Device Research Conference, P408, DOI 10.1109/ESSDERC.2010.5618194

← 1 2 →