Pattern shifting analyses of micro-structures of IC package

被引:1
|
作者
He, Y. T. [1 ]
Shi, R. [2 ]
Li, H. P. [1 ]
Li, F. [1 ]
Zhang, G. Q.
Ernst, L. J. [3 ]
机构
[1] Air Force Engn Univ, Engn Coll, Xian 710038, Shaanxi, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[3] Delft Univ Technol, NL-2628 CD Delft, Netherlands
来源
ENGINEERING PLASTICITY AND ITS APPLICATIONS FROM NANOSCALE TO MACROSCALE, PTS 1 AND 2 | 2007年 / 340-341卷
关键词
package; pattern shifting; plastic strain; influence of geometry; response surface; model;
D O I
10.4028/www.scientific.net/KEM.340-341.1333
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Pattern shift is one of the main failures of micro-electronics. In this paper, the influence of plastic deformation values of micro-structures of IC packages on the pattern shift of metal lines is studied by maximum plastic strain theory using a certain 2D FEM model with different design parameters, "'d", "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al". For different critical process step, the final process temperature is acted as a representative parameter to analyze its impact. Furthermore, Response Surface Model (RSM) of plastic strains is established using any two design parameters. Results show that "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al" will have different influence on pattern shifting while "d" have little impact.
引用
收藏
页码:1333 / +
页数:2
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