Influence of carbon on sintering of the Al-Si-C-N system composite

被引:1
作者
Fujita, Motonari [1 ]
Ommyoji, Junji [1 ]
Yamaguchi, Akira [1 ]
机构
[1] Okayama Ceram Res Fdn, Okayama 7050021, Japan
关键词
Al4SiC4; AlN; spark plasma sintering; pore exclusion; reaction sintering;
D O I
10.2109/jcersj.115.272
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The composite in Al4SiC4-AlN and Al4SiC4-AlN-C system were sintered by a spark plasma sintering method. The powders of metal Al, Si and carbon black and AlN as starting materials were mixed. The mixture was calcined at 1300 degrees C and sintered at 1600 degrees to 1800 degrees C by spark plasma sintering. Shrinkage during sintering, density, microstructure and phase of sintered bodies were measured. X-ray diffraction analysis gave Al5SiC4N (15R) and AlN (2H) phases in the bodies sintered at 1750 degrees C. Densification did not occur in some composition in 50 to 80% AlN of the system Al4SiC4-AlN, but their densification was accelerated by addition of carbon. By the analysis of shrinkage during sintering and SEM observation of microstructure, the grain of Al5SiC4N (15R) and AlN (2H) grew, and pore exclusion was obstructed in the system Al4SiC4-AlN, though the grain did not grow, and pore exclusion was accelerated in the system Al4SiC4-AlN-C.
引用
收藏
页码:272 / 277
页数:6
相关论文
共 17 条
[1]  
[Anonymous], 1966, ACTA CRYSTALLOGR 4
[2]  
BANDOH Y, 1991, CERAMICS JAPAN, V26, P754
[3]   OPTICAL AND X-RAY POWDER DIFFRACTION DATA FOR AL4SIC4 [J].
BARCZAK, VJ .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1961, 44 (06) :299-299
[4]  
Carrillo-Heian EM, 2000, J AM CERAM SOC, V83, P1103, DOI 10.1111/j.1151-2916.2000.tb01338.x
[5]   Thermal conductivity and temperature dependence of electrical resistivity of Al4SiC4-SiC sintered bodies prepared by pulse electronic current sintering [J].
Inoue, K ;
Mori, S ;
Yamaguchi, A .
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2003, 111 (07) :466-470
[6]   Oxidation behavior of Al4SiC4-SiC sintered bodies [J].
Inoue, K ;
Mori, S ;
Yamaguchi, A .
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2003, 111 (02) :126-132
[7]   Thermal conductivity and temperature dependence of linear thermal expansion coefficient of Al4SiC4 sintered bodies prepared by pulse electronic current sintering [J].
Inoue, K ;
Mori, S ;
Yamaguchi, A .
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2003, 111 (05) :348-351
[8]   Temperature dependence of electrical resistivity of the Al4SiC4 sintered bodies prepared by pulse electronic current sintering [J].
Inoue, K ;
Yamaguchi, A .
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2003, 111 (04) :267-270
[9]   Fabrication and oxidation resistance of A14SiC4 body [J].
Inoue, K ;
Yamaguchi, A ;
Hashimoto, S .
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2002, 110 (11) :1010-1015
[10]   X-RAY CRYSTALLOGRAPHIC DATA ON ALUMINUM SILICON-CARBIDE, ALPHA-AL4SIC4 AND AL4SI2C5 [J].
INOUE, Z ;
INOMATA, Y ;
TANAKA, H ;
KAWABATA, H .
JOURNAL OF MATERIALS SCIENCE, 1980, 15 (03) :575-580