Optimization of the sputtering process parameters of GZO films using the Grey Taguchi method

被引：28

作者：

Chen, Chien-Chih ^{[1
]}

Tsao, Chung-Chen ^{[2
]}

Lin, You-Chiuan ^{[1
]}

Hsu, Chun-Yao ^{[1
]}

机构：

[1] Lunghwa Univ Sci & Technol, Dept Mech Engn, Tao Yuan 33306, Taiwan

[2] Tahua Inst Technol, Dept Automat Engn, Hsinchu 30740, Taiwan

来源：

CERAMICS INTERNATIONAL | 2010年 / 36卷 / 03期

关键词：

Gallium-doped zinc oxide; Transparent conductive oxide; Polymeric substrates; Grey relational analysis; Post-annealing; OXIDE THIN-FILMS; DOPED ZNO FILMS; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; ZINC; THICKNESS; DEPOSITION; PERFORMANCES; TRANSPARENT; RESISTIVITY;

D O I：

10.1016/j.ceramint.2009.11.019

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper examines the optimization of the process parameters of GZO films deposited on polyethylene terephthalate substrates by R.F. magnetron sputtering using the Taguchi method, aiming to obtain highly transparent and conductive films. The influences of the various sputtering factors (R.F. power, sputtering pressure, deposition time, substrate temperature and post-annealing temperature) on electrical resistivity and structural, morphological and optical transmittance of GZO films are analyzed. The electrical resistivity and the optical transmittance of GZO films were improved by post-annealing the substrate during the deposition process. Experimental results indicate the optimal process parameters in GZO films deposited on polyethylene terephthalate substrates can be determined effectively. The electrical resistivity of GZO films is decreased from 1.194 x 10(-3) Omega cm to 8.627 x 10(-4) Omega cm and the optical transmittance is increased from 86.148% to 90%, leading to multiple performance characteristics in deposition qualities through the Grey Taguchi method. (C) 2009 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：979 / 988

页数：10

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