Heat Resistance of Ga-Doped ZnO Thin Films for Application as Transparent Electrodes in Liquid Crystal Displays

被引：44

作者：

Yamamoto, Naoki ^{[1
]}

Makino, Hisao ^{[1
]}

Yamada, Takahiro ^{[1
]}

Hirashima, Yoshinori ^{[2
]}

Iwaoka, Hiroaki ^{[2
]}

Ito, Takahiro ^{[2
]}

Ujihara, Akira ^{[2
]}

Hokari, Hitoshi ^{[3
]}

Morita, Hidehiro ^{[3
]}

Yamamoto, Tetsuya ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst, Kochi 7828502, Japan

[2] Geomatec Co Ltd, Ctr Res & Dev, Ota Ku, Tokyo 1460093, Japan

[3] Casio Comp Co Ltd, Elect Device Div, Lab, Tokyo 1928556, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 02期

关键词：

electrical conductivity; electrodes; gallium; II-VI semiconductors; internal stresses; liquid crystal displays; optical filters; plasma deposition; semiconductor doping; semiconductor thin films; sputter deposition; zinc compounds; ZINC-OXIDE;

D O I：

10.1149/1.3267506

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrical characteristics and residual stresses in three types of Ga-doped ZnO (GZO) films formed using a reactive plasma deposition system (type 1 film) and a magnetron sputtering system utilizing dc power (type 2 film) or dc+radio-frequency (rf) power (type 3 film) were compared from the viewpoint of heat resistance as a function of the thermal process for liquid crystal display (LCD) fabrication. The resistivity of the as-formed GZO films prepared at 180 degrees C can be ordered as (2.75 mu m)< type 3 film (3.88 mu m)< type 2 film (6.00 mu m). However, the heat resistance of the films was ordered as type 3 (200-250 degrees C)< type 2 (250-300 degrees C)< type 1 (350-400 degrees C). Thus, the GZO films prepared by magnetron sputtering utilizing rf+dc power did not satisfy the condition for transparent electrodes for LCDs in terms of heat resistance against the ca. 250 degrees C processing step. LCD panels (3 in.) using the GZO transparent electrodes on the red-green-blue color filters were fabricated for demonstrating the feasibility of using this material as an electrode.

引用

页码：J13 / J20

页数：8

共 12 条

[1] ELECTRICAL-PROPERTIES OF GALLIUM-DOPED ZINC-OXIDE FILMS PREPARED BY RF-SPUTTERING [J].