9-kW peak power and 150-fs duration blue-violet optical pulses generated by GaInN master oscillator power amplifier

被引：13
作者：
Kono, Shunsuke [1 ]
Koda, Rintaro [1 ]
Kawanishi, Hidekazu [1 ]
Narui, Hironobu [1 ]
机构：
[1] Sony Corp, UI Device Dev Div, Compound Semicond Dev Dept, 4-14-1 Asahi Cho, Atsugi, Kanagawa 2430014, Japan
来源：
OPTICS EXPRESS | 2017年 / 25卷 / 13期
关键词：
FEMTOSECOND SEMICONDUCTOR-LASER; DISK LASERS; DIODE-LASER; SYSTEM; VECSEL;
D O I：
10.1364/OE.25.014926
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Blue-violet optical pulses of 9-kW peak power and 150-fs duration were obtained from a GaInN master oscillator power amplifier system using a nonlinear dispersion compensator. Seed pulses from a dispersion-compensated GaInN mode-locked semiconductor laser diode were stretched to 3-ps duration using a nonlinear dispersion compensator with a spatial light modulator that added second-order phase dispersion to an optimized nonlinear phase dispersion compensating the higher-order dispersion of the optical pulses. The stretched phase-optimized pulses were efficiently amplified to 3.0 nJ by a GaInN semiconductor optical amplifier. The amplified pulses were subsequently compressed using a linear pulse compressor, yielding 1.4-nJ femtosecond pulses. The obtained results show the highest peak-power ever reported for an electrically-pumped semiconductor gain medium. (C) 2017 Optical Society of America
引用
收藏
页码：14926 / 14934
页数：9
相关论文
共 25 条
[1]   Multi-Angle VECSEL Cavities for Dispersion Control and Peak-Power Scaling [J].
Baker, Caleb W. ;
Scheller, Maik ;
Laurain, Alexandre ;
Ruiz-Perez, Antje ;
Stolz, Wolfgang ;
Addamane, Sadhvikas ;
Balakrishnan, Ganesh ;
Koch, Stephan W. ;
Jones, R. Jason ;
Moloney, Jerome V. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 29 (03) :326-329
[2]   High peak power pulses from dispersion optimised modelocked semiconductor laser [J].
Balzer, J. C. ;
Schlauch, T. ;
Klehr, A. ;
Erbert, G. ;
Traenkle, G. ;
Hofmann, M. R. .
ELECTRONICS LETTERS, 2013, 49 (13) :838-839
[3]   Measurement and calculation of the critical pulsewidth for gain saturation in semiconductor optical amplifiers [J].
Borri, P ;
Scaffetti, S ;
Mork, J ;
Langbein, W ;
Hvam, JM ;
Mecozzi, A ;
Martelli, F .
OPTICS COMMUNICATIONS, 1999, 164 (1-3) :51-55
[4]   200-FS OPTICAL PULSE GENERATION AND INTRACAVITY PULSE EVOLUTION IN A HYBRID MODE-LOCKED SEMICONDUCTOR DIODE-LASER AMPLIFIER SYSTEM [J].
DELFYETT, PJ ;
FLOREZ, L ;
STOFFEL, N ;
GMITTER, T ;
ANDREADAKIS, N ;
ALPHONSE, G ;
CEISLIK, W .
OPTICS LETTERS, 1992, 17 (09) :670-672
[5]  
Denk W., 1990, NATURE, V248, P73
[6]   Self-optimizing femtosecond semiconductor laser [J].
Doepke, Benjamin ;
Pilny, Rouven H. ;
Brenner, Carsten ;
Klehr, Andreas ;
Erbert, Goetz ;
Traenkle, Guenther ;
Balzer, Jan C. ;
Hofmann, Martin R. .
OPTICS EXPRESS, 2015, 23 (08) :9710-9716
[7]   Mode-locked semiconductor disk lasers [J].
Gaafar, Mahmoud A. ;
Rahimi-Iman, Arash ;
Fedorova, Ksenia A. ;
Stolz, Wolfgang ;
Rafailov, Edik U. ;
Koch, Martin .
ADVANCES IN OPTICS AND PHOTONICS, 2016, 8 (03) :370-400
[8]   Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AllnN/GaN distributed Bragg reflectors [J].
Ikeyama, Kazuki ;
Kozuka, Yugo ;
Matsui, Kenjo ;
Yoshida, Shotaro ;
Akagi, Takanobu ;
Akatsuka, Yasuto ;
Koide, Norikatsu ;
Takeuchi, Tetsuya ;
Kamiyama, Satoshi ;
Iwaya, Motoaki ;
Akasaki, Isamu .
APPLIED PHYSICS EXPRESS, 2016, 9 (10)
[9]   Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth [J].
Izumi, Shouichiro ;
Fuutagawa, Noriyuki ;
Hamaguchi, Tatsushi ;
Murayama, Masahiro ;
Kuramoto, Masaru ;
Narui, Hironobu .
APPLIED PHYSICS EXPRESS, 2015, 8 (06)
[10]   Passively modelocked surface-emitting semiconductor lasers [J].
Keller, Ursula ;
Tropper, Anne C. .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2006, 429 (02) :67-120
123