Residual stress release for SU-8 structures by water assist ultrasonic

被引:5
作者
Qu, Xingtian [1 ]
Li, Jinlai [1 ]
Yin, Zhifu [1 ]
机构
[1] Jilin Univ, Sch Mech Sci & Engn, Changchun 130012, Jilin, Peoples R China
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2018年 / 24卷 / 07期
基金
中国国家自然科学基金;
关键词
FABRICATION; SILICON; RESIST; FILMS; MEMS;
D O I
10.1007/s00542-018-3767-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High aspect ratio capability leads to a successful use of SU-8 photo-resist in a diversity of micro-scale polymer devices as a construction material. However, SU-8 structures fabricated by conventional photolithography technique suffer from high residual stress which results in the collapse of the fabricated structures. In the present work, a water assist ultrasonic method was proposed to decrease the residual stress in SU-8 structures. The mechanism of this method and ultrasonic parameters (power, temperature, and duration) on the remaining rate of SU-8 structures was studied. The experiments showed that only ultrasonic duration was conducive to the reduction of residual stress and a lower residual stress was associated with a longer ultrasonic duration. The proposed method is a potential candidate for fabricating of high aspect ratio SU-8 structures without any damage.
引用
收藏
页码:3141 / 3147
页数:7
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