(In)GaSb/AlGaSb quantum wells grown on Si substrates

被引：10
作者：
Akahane, Kouichi
Yamamoto, Naokatsu
Gozu, Shin-ichiro
Ueta, Akio
Ohtani, Naoki
机构：
[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
[2] Doshisha Univ, Kyoto 6100321, Japan
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 10期
关键词：
molecular beam epitaxy; antimonides; semiconducting III-V materials;
D O I：
10.1016/j.tsf.2006.07.131
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 mu m, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schrodinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (similar to 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4467 / 4470
页数：4
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