Impact of Field-Plate Insulating Layer on Junction Breakdown Instability in OFT-Pw.MOSFET Devices

被引：2

作者：

Barletta, Giacomo ^{[1
]}

Magnone, Paolo ^{[2
]}

Magri, Angelo ^{[1
]}

机构：

[1] STMicroelectronics Srl, I-95121 Catania, Italy

[2] Univ Padua, Dept Management & Engn, I-36100 Vicenza, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 07期

关键词：

Junctions; Stress; Logic gates; Electric breakdown; Human factors; Monitoring; MOSFET; Breakdown instability; hot carrier; oxide-filled trench (OFT); power MOSFET (Pw; MOSFET); walk-out;

D O I：

10.1109/TED.2022.3176256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we investigate the junction breakdown instability in oxide-filled trench power MOSFETs, as a function of field-plate oxide characteristics. We compare the junction breakdown instability in devices adopting field-plate insulating layers thermally grown and low-pressure chemical vapor deposition process (LPCVD) deposited. We experimentally observe a different junction breakdown walk-out, depending on the field-plate insulating material. We found out that, by applying an electrical stress, besides the junction breakdown instability, a damage of the channel region is observed in the case of thermally grown field-plate oxide layer.

引用

页码：3820 / 3825

页数：6

共 12 条

[1]

Baliga B.J., 1999, U.S. Patent, Patent No. [5 998 833, 5998833]

[2]

Baliga BJ, 2005, SILICON RF POWER MOSFETS, P1, DOI 10.1142/9789812569325

[3] Two-Dimensional Analytical Sub-Threshold Model of Double Gate Mosfet with Gate Stack [J].

Bansal, J. ;

Sharma, N. ;

Kumar, S. P. ;

Chaujar, R. ;

Gupta, M. ;

Gupta, R. S. .

INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN MICROWAVE THEORY AND APPLICATIONS, PROCEEDINGS, 2008, :847-849

[4]

Barletta G., 2013, U.S. Patent, Patent No. [20130001678A1, 20130001678]

[5]

Doering R., 2008, HDB SEMICONDUCTOR MA

[6]

Häberlen O, 2015, PROC INT SYMP POWER, P65, DOI 10.1109/ISPSD.2015.7123390

[7] Analytical model for the electric field distribution in SOI RESURF and TMBS structures [J].

Merchant, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1264-1267

[8] Hot Carrier Effects in Trench-Based Integrated Power Transistors [J].

Moens, P. ;

Roig, J. ;

Desoete, B. ;

Bauwens, F. ;

Tack, M. .

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, :416-420

[9]

Nishiwaki Tatsuya, 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P463, DOI 10.23919/ISPSD.2017.7988879

[10]

Nishiwaki T, 2016, INT SYM POW SEMICOND, P215, DOI 10.1109/ISPSD.2016.7520816

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