Analysis of surface degradation of silicone rubber due to tracking - A physicochemical approach

被引：5

作者：

Sarathi, R ^{[1
]}

Rao, UM ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

JOURNAL OF APPLIED POLYMER SCIENCE | 2003年 / 88卷 / 10期

关键词：

silicone rubber; surface degradation; WAXD; differential scanning calorimetry (DSC); thermogravimetric analysis (TGA);

D O I：

10.1002/app.11868

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

The tracking phenomenon for silicone rubber material under AC and DC voltages, with ammonium chloride as the contaminant, has been studied. The tracking phenomenon is explained in detail with a leakage current measurement. The tracking time depends on the conductivity and the flow rate of the contaminant. The surface condition of the aged specimens was characterized with contact angle measurements. The thermal and chemical stabilities of the material were identified with a methodical experimental study. Physicochemical analysis by wide-angle X-ray diffraction (WAXD), thermogravimetric differential thermal analysis (TG-DTA), and the differential scanning calorimetry (DSC) indicated that the mechanism of the tracking process is due to surface degradation. The tracking time is different for AC and DC voltages. (C) 2003 Wiley Periodicals, Inc.

引用

页码：2392 / 2399

页数：8

共 14 条

[1]

ALGHAMDI ASG, 1996, IEEE T DIELECTRICS E, V3

[2]

Crank J, 1979, MATH DIFFUSION

[3]

Gorur R. S., 1999, Outdoor insulators

[4]

Gorur R. S., 1992, IEEE T POWER DELIVER, V7

[5]

Hasegawa S, 1997, PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 AND 2, P754, DOI 10.1109/ICPADM.1997.616545

[6]

HOMMA H, 1998, P 1998 INT S EL INS, P2

[7]

*IEC, 1984, IEC PUBL, V587

[8]

KAMOSAWA T, 1994, P 4 INT C PROP APPL

[9]

KIM SH, 1992, 1992 IEEE INT S EL I, P237

[10] Solid residue formation of RTV silicone rubber due to dry-band arcing and thermal decomposition [J].

Kumagai, S ;

Wang, XS ;

Yoshimura, N .

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 1998, 5 (02) :281-289

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