Small d-spacing WSi2/Si narrow bandpass multilayers

To develop narrow-bandpass multilayer monochromators, we have studied small d-spacing WSi2/Si multilayers. We found that WSi2/Si is an excellent multilayer system for achieving both the desired spectral resolution and peak reflectivity. Compared to other traditional multilayer systems such as W/Si, WSi2/Si not only has a lower density and lower absorption, but also is a chemically more stable system, since WSi2 is already a silicide. One thus expects better thermal stability and sharper interfaces for WSi2/Si multilayers. There are two approaches to achieve high-resolution multilayers: either decrease the d spacing or use low absorption materials. By using WSi2/Si. we can utilize both approaches in the same system to achieve good energy resolution and peak reflectivity. Another advantage of this system is that the sputtering rate for Si is much higher than other traditional low-Z materials. Several WSi2/Si multilayers have been fabricated at the Advanced Photon Source (APS) deposition lab using dc magnetron sputtering with constant currents of 0.5 A in Ar at a pressure of 2.3 mTorr. A test sample of [9.65Angstrom-WSi2/10.05Angstrom-Si] X 300 was studied at four institutions: using laboratory x-ray diffractometers with Cu Kalpha (8.048 keV) wavelength at the APS x-ray lab and at European Synchrotron Radiation Facility (ESRF). and using synchrotron undulator x-rays at 10 keV at MHATT-CAT and at 25 keV at ChemMatCARS-CAT of the APS. The measured first-order reflectivity was 54% with a bandpass of 0.46% at 10 keV and 66% reflectivity with a bandpass of 0.67% at 25 keV of undulator x-rays. Similar results were obtained from Cu Kalpha x-rays. This result is very attractive for the design of a multilayer monochromator for the ChemMatCARS-CAT to be used in the 20 to 25 keV range. Other small d-spacing multilayers are being studied. Comparison between WSi2/Si and W/Si multilayers will be discussed.