Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm

被引：0

作者：

Dragulinescu, Andrei ^{[1
]}

Dumitrescu, Mihail ^{[2
]}

机构：

[1] Univ Politehn Bucuresti, Elect Technol & Reliabil Dept, Bucharest, Romania

[2] Tampere Univ Technol, Optoelect Res Ctr, Tampere, Finland

来源：

2020 IEEE 26TH INTERNATIONAL SYMPOSIUM FOR DESIGN AND TECHNOLOGY IN ELECTRONIC PACKAGING (SIITME 2020) | 2020年

关键词：

laser; quantum well; dilute nitride; InGaAsN;

D O I：

10.1109/siitme50350.2020.9292223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum well (QW) semiconductor lasers working at various wavelengths have been extensively used in the last decade due to their advantages in a wide range of application domains. One of the material systems used for fabricating these laser structures is InGaAsN with a very small percent of nitrogen, having useful applications for lasers working at long wavelengths and for high-efficiency multi-junction solar cells. We simulated the performance characteristics of a 1047 nm InGaAsN QW laser, specifically the I-V and L-I characteristics, energy band diagram, wave intensity distribution, threshold current, slope efficiency and external differential quantum efficiency, with the purpose of gaining a wide perspective on the structure performance in terms of some of its most important parameters and to constitute a useful reference for applications

引用

页码：327 / 330

页数：4

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