Capacitive coupling noise in high-speed VLSI circuits

被引:42
作者
Heydari, P [1 ]
Pedram, M
机构
[1] Univ So Calif, Dept Elect Engn & Comp Sci, Los Angeles, CA 90089 USA
[2] Univ So Calif, Dept Elect Engn Syst, Los Angeles, CA 90089 USA
关键词
capacitance; CMOS circuits; crosstalk; deep submicron; interconnect; noise; very large scale integration (VLSI);
D O I
10.1109/TCAD.2004.842798
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Rapid technology. scaling along with the continuous increase in the operation frequency cause the crosstalk noise to become a major source of performance degradation in high-speed integrated circuits. This paper presents an efficient metric to estimate the capacitive crosstalk in nanometer high-speed very large scale integration circuits. In particular, we provide closed-form expressions for the peak amplitude, the pulsewidth, and the time-domain waveform of the crosstalk noise. Experimental results show that the maximum error of our noise predictions is less than 13%, while the average error is only 5.82%.
引用
收藏
页码:478 / 488
页数:11
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