Carrier Depletion near the Grain Boundary of a SiC Bicrystal

被引：12

作者：

Kim, Young-Wook ^{[1
]}

Tochigi, Eita ^{[2
]}

Tatami, Junichi ^{[3
]}

Kim, Yong-Hyeon ^{[1
]}

Jang, Seung Hoon ^{[1
]}

Javvaji, Srivani ^{[4
]}

Jung, Jeil ^{[4
]}

Kim, Kwang Joo ^{[5
]}

Ikuhara, Yuichi ^{[2
]}

机构：

[1] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 02504, South Korea

[2] Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan

[3] Yokohama Natl Univ, Grad Sch Environm & Informat Sci, Yokohama, Kanagawa 2409501, Japan

[4] Univ Seoul, Dept Phys, Seoul 02504, South Korea

[5] Konkuk Univ, Dept Phys, Seoul 05029, South Korea

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

基金：

日本学术振兴会; 新加坡国家研究基金会;

关键词：

SILICON-CARBIDE CERAMICS; HIGH-TEMPERATURE STRENGTH; ELECTRICAL-PROPERTIES; THERMAL-CONDUCTIVITY; MICROSTRUCTURE; YTTRIA; ALUMINUM; NITROGEN; NITRIDE;

D O I：

10.1038/s41598-019-54525-z

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Silicon carbide (SiC) bicrystals were prepared by diffusion bonding, and their grain boundary was observed using scanning transmission electron microscopy. The n-type electrical conductivity of a SiC single crystal was confirmed by scanning nonlinear dielectric microscopy (SNDM). Dopant profiling of the sample by SNDM showed that the interface acted as an electrical insulator with a similar to 2-mu m-thick carrier depletion layer. The carrier depletion layer contained a higher number of oxygen impurities than the bulk crystals due to the incorporation of oxygen from the native oxide film during diffusion bonding. Density functional theory calculations of the density of states as a function of the bandgap also supported these findings. The existence of a carrier depletion layer was also confirmed in a p-type polycrystalline SiC ceramic. These results suggest that the electrical conductivity of SiC ceramics was mostly affected by carrier depletion near the grain boundary rather than the grain boundary itself.

引用

页数：7

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