Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films

被引：44

作者：

Kumar, E. Senthil ^{[1
,2
]}

Venkatesh, S. ^{[3
]}

Rao, M. S. Ramachandra ^{[1
,2
]}

机构：

[1] Indian Inst Technol, Dept Phys, Nano Funct Mat Technol Ctr, Madras 600036, Tamil Nadu, India

[2] Indian Inst Technol, Mat Sci Res Ctr, Madras 600036, Tamil Nadu, India

[3] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 23期

关键词：

SEMICONDUCTORS; OXIDE;

D O I：

10.1063/1.3449122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the electrical, magnetic, and magnetotransport properties of Li-Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes. In a narrow window of oxygen growth pressure, 10(-3)-10(-2) mbar, the films exhibited p-type conductivity with a maximum hole concentration similar to 8.2X10(17) cm(-3). Magnetoresistance exhibited by the films is attributed to scattering of charge carriers due to localized magnetic moments. Insulating films showed superparamagnetic behavior, whereas both n-type and p-type films showed room temperature ferromagnetism. Our findings suggest that oxygen vacancies and Ni ions in cation site are jointly responsible for ferromagnetism that is not dependent on the carrier type.(C) 2010 American Institute of Physics. [doi: 10.1063/1.3449122]

引用

页数：3

共 20 条

[1] Donor impurity band exchange in dilute ferromagnetic oxides [J].

Coey, JMD ;

Venkatesan, M ;

Fitzgerald, CB .

NATURE MATERIALS, 2005, 4 (02) :173-179

[2] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[3] Pulsed laser deposition of ferromagnetic Zn0.95Co0.05O thin films [J].

Gacic, Milan ;

Adrian, Hermann ;

Jakob, Gerhard .

APPLIED PHYSICS LETTERS, 2008, 93 (15)

[4] Ferromagnetism in Mn and Sb co-doped ZnO films [J].

Ji, Gen-Hua ;

Gu, Zheng-Bin ;

Lu, Ming-Hui ;

Wu, Di ;

Zhang, Shan-Tao ;

Zhu, Yong-Yuan ;

Zhu, Shi-Ning ;

Chen, Yan-Feng .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (42)

[5] High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties [J].

Jin, ZW ;

Fukumura, T ;

Kawasaki, M ;

Ando, K ;

Saito, H ;

Sekiguchi, T ;

Yoo, YZ ;

Murakami, M ;

Matsumoto, Y ;

Hasegawa, T ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2001, 78 (24) :3824-3826

[6] Defect-induced magnetic order in pure ZnO films [J].

Khalid, M. ;

Ziese, M. ;

Setzer, A. ;

Esquinazi, P. ;

Lorenz, M. ;

Hochmuth, H. ;

Grundmann, M. ;

Spemann, D. ;

Butz, T. ;

Brauer, G. ;

Anwand, W. ;

Fischer, G. ;

Adeagbo, W. A. ;

Hergert, W. ;

Ernst, A. .

PHYSICAL REVIEW B, 2009, 80 (03)

[7] Magneto resistance in degenerate CdS: Localized magnetic moments [J].

Khosla, R. P. ;

Fischer, J. R. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4084-4097

[8] Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition [J].

Kim, H. S. ;

Lugo, F. ;

Pearton, S. J. ;

Norton, D. P. ;

Wang, Yu-Lin ;

Ren, F. .

APPLIED PHYSICS LETTERS, 2008, 92 (11)

[9] Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method [J].

Lu, J. G. ;

Zhang, Y. Z. ;

Ye, Z. Z. ;

Zhu, L. P. ;

Wang, L. ;

Zhao, B. H. ;

Liang, Q. L. .

APPLIED PHYSICS LETTERS, 2006, 88 (22)

[10] The origins of ferromagnetism in Co-doped ZnO single crystalline films: From bound magnetic polaron to free carrier-mediated exchange interaction [J].

Lu, Z. L. ;

Hsu, H. S. ;

Tzeng, Y. H. ;

Zhang, F. M. ;

Du, Y. W. ;

Huang, J. C. A. .

APPLIED PHYSICS LETTERS, 2009, 95 (10)

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