Simulation of semiconductor quantum well lasers

被引：23

作者：

Alam, MA ^{[1
]}

Hybertsen, MS ^{[1
]}

Smith, RK ^{[1
]}

Baraff, GA ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 10期

关键词：

frequency response; quantum well lasers; semiconductor device modeling; semiconductor lasers; simulation; simulation software;

D O I：

10.1109/16.870572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new quantum well laser simulator that accounts for details of carrier transport, distribution of two-dimensional (2-D) carriers within the quantum well, optical gain spectra, and photon rate equations, is presented, The resulting set of complicated equations is solved using "slack variables"-a new algorithm that is both efficient and stable, Results are compared with experiments to verify the simulator.

引用

收藏

页码：1917 / 1925

页数：9

相关论文

共 19 条

[1] ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS [J].

ACKERMAN, DA ;

SHTENGEL, GE ;

HYBERTSEN, MS ;

MORTON, PA ;

KAZARINOV, RF ;

TANBUNEK, T ;

LOGAN, RA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :250-263

[2]

ADACHI S, 1992, PHYSICAL PROPERTIES

[3] Effects of carrier heating on laser dynamics - A Monte Carlo study [J].

Alam, MA ;

Lundstrom, MS .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (12) :2209-2220

[4] Semiclassical description of electron transport in semiconductor quantum-well devices [J].

Baraff, GA .

PHYSICAL REVIEW B, 1997, 55 (16) :10745-10753

[5] Model for the effect of finite phase-coherence length on resonant transmission and capture by quantum wells [J].

Baraff, GA .

PHYSICAL REVIEW B, 1998, 58 (20) :13799-13810

[6] Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers:: Experiment and modeling [J].

Belenky, GL ;

Reynolds, CL ;

Donetsky, DV ;

Shtengel, GE ;

Hybertsen, MS ;

Alam, MA ;

Baraff, GA ;

Smith, RK ;

Kazarinov, RF ;

Winn, J ;

Smith, LE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (10) :1515-1520

[7]

Chow GC, 1997, ECON ID LEAD 21ST C, V2, P3

[8]

DENNIS JE, 1983, NUMERICAL METHODS UN

[9] Simulation of carrier transport and nonlinearities in quantum-well laser diodes [J].

Grupen, M ;

Hess, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (01) :120-140

[10] THE EFFECT OF INTERVALENCE BAND ABSORPTION ON THE THERMAL-BEHAVIOR OF INGAASP LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR ;

LUONGO, JP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :947-952