Nano-SiO2 induces apoptosis via activation of p53 and Bax mediated by oxidative stress in human hepatic cell line

被引:180
|
作者
Ye, Yiyi [1 ]
Liu, Jianwen [1 ]
Xu, Jianhe [1 ]
Sun, Lijuan [1 ]
Chen, Mingcang [1 ]
Lan, Minbo [1 ]
机构
[1] E China Univ Sci & Technol, Sch Pharm, Shanghai Key Lab Chem Biol, State Key Lab Bioreactor Engn, Shanghai 200237, Peoples R China
关键词
Nano-SiO2; Oxidative stress; Apoptosis; p53; Bax; Human hepatic cells; RADIATION-INDUCED APOPTOSIS; SILICA NANOPARTICLES; CARBON NANOTUBES; ACUTE TOXICITY; DNA-DAMAGE; OXIDE; CYTOTOXICITY; EXPRESSION; PARTICLES; TITANIUM;
D O I
10.1016/j.tiv.2010.01.001
中图分类号
R99 [毒物学(毒理学)];
学科分类号
100405 ;
摘要
Nanoparticles such as nano-SiO2 are increasingly used in food, cosmetics, diagnosis, imaging and drug delivery. However, toxicological data of nano-SiO2 on hepatic cells in vitro and their detailed molecular mechanisms still remain unclear. In order to assess toxicity of nano-SiO2, L-02 cells were exposed to 0.2, 0.4 and 0.6 mg/ml of SiO2 colloids (21,48 and 86 nm) for 12, 24, 36 and 48 h. Lactate dehydrogenase released from damaged cells were quantified, cellular ultrastructural organization was observed, and the levels of reactive oxygen species (ROS), lipid peroxidation and glutathione were measured. Apoptosis induced by 21 nm SiO2 was characterized by annexin V-FITC/PI staining and DNA ladder assay. Furthermore, apoptosis related proteins such as p53, Bax and Bcl-2 were analyzed by using western blot analysis. Our data indicated that nano-SiO2 caused cytotoxicity in size, dose and time dependent manners. Oxidative stress and apoptosis were induced by exposure to 21 nm SiO2. Moreover, the expression of p53 and Bax was increased in time and dose dependent patterns, whereas the expression of Bcl-2 was not significantly changed. In conclusion, ROS-mediated oxidative stress, the activation of p53 and up-regulation of Bax/Bcl-2 ratio are involved in mechanistic pathways of 21 nm SiO2 induced apoptosis in L-02 cells. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:751 / 758
页数:8
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