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2D MoS2 Neuromorphic Devices for Brain-Like Computational Systems
被引:306
作者:
Jiang, Jie
[1
]
Guo, Junjie
[1
]
Wan, Xiang
[2
,3
]
Yang, Yi
[2
,3
]
Xie, Haipeng
[1
]
Niu, Dongmei
[1
]
Yang, Junliang
[1
]
He, Jun
[1
]
Gao, Yongli
[1
,4
]
Wan, Qing
[2
,3
]
机构:
[1] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
[2] Nanjing Univ, Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn & Collaborat, Nanjing 210093, Jiangsu, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[4] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
来源:
基金:
中国国家自然科学基金;
美国国家科学基金会;
关键词:
RESISTIVE SWITCHING MEMORY;
SYNAPTIC PLASTICITY;
INTEGRATED-CIRCUITS;
HIGH-PERFORMANCE;
TRANSISTORS;
SYNAPSES;
NEURONS;
MODULATION;
GRAPHENE;
ALUMINUM;
D O I:
10.1002/smll.201700933
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Hardware implementation of artificial synapses/neurons with 2D solid-state devices is of great significance for nanoscale brain-like computational systems. Here, 2D MoS2 synaptic/neuronal transistors are fabricated by using poly(vinyl alcohol) as the laterally coupled, proton-conducting electrolytes. Fundamental synaptic functions, such as an excitatory postsynaptic current, paired-pulse facilitation, and a dynamic filter for information transmission of biological synapse, are successfully emulated. Most importantly, with multiple input gates and one modulatory gate, spiking-dependent logic operation/modulation, multiplicative neural coding, and neuronal gain modulation are also experimentally demonstrated. The results indicate that the intriguing 2D MoS2 transistors are also very promising for the next-generation of nanoscale neuromorphic device applications.
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页数:11
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