2D MoS2 Neuromorphic Devices for Brain-Like Computational Systems

被引:306
作者
Jiang, Jie [1 ]
Guo, Junjie [1 ]
Wan, Xiang [2 ,3 ]
Yang, Yi [2 ,3 ]
Xie, Haipeng [1 ]
Niu, Dongmei [1 ]
Yang, Junliang [1 ]
He, Jun [1 ]
Gao, Yongli [1 ,4 ]
Wan, Qing [2 ,3 ]
机构
[1] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
[2] Nanjing Univ, Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn & Collaborat, Nanjing 210093, Jiangsu, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[4] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
RESISTIVE SWITCHING MEMORY; SYNAPTIC PLASTICITY; INTEGRATED-CIRCUITS; HIGH-PERFORMANCE; TRANSISTORS; SYNAPSES; NEURONS; MODULATION; GRAPHENE; ALUMINUM;
D O I
10.1002/smll.201700933
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hardware implementation of artificial synapses/neurons with 2D solid-state devices is of great significance for nanoscale brain-like computational systems. Here, 2D MoS2 synaptic/neuronal transistors are fabricated by using poly(vinyl alcohol) as the laterally coupled, proton-conducting electrolytes. Fundamental synaptic functions, such as an excitatory postsynaptic current, paired-pulse facilitation, and a dynamic filter for information transmission of biological synapse, are successfully emulated. Most importantly, with multiple input gates and one modulatory gate, spiking-dependent logic operation/modulation, multiplicative neural coding, and neuronal gain modulation are also experimentally demonstrated. The results indicate that the intriguing 2D MoS2 transistors are also very promising for the next-generation of nanoscale neuromorphic device applications.
引用
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页数:11
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