Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

被引：88

作者：

Sasaki, Tomoyuki ^{[1
]}

Ando, Yuichiro ^{[2
,3
]}

Kameno, Makoto ^{[2
]}

Tahara, Takayuki ^{[3
]}

Koike, Hayato ^{[1
]}

Oikawa, Tohru ^{[1
]}

Suzuki, Toshio ^{[4
]}

Shiraishi, Masashi ^{[2
,3
]}

机构：

[1] TDK Corp, Adv Technol Dev Ctr, Tokyo, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Suita, Osaka 565, Japan

[3] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[4] Akita Prefectural Ind Ctr, AIT, Akita, Japan

来源：

PHYSICAL REVIEW APPLIED | 2014年 / 2卷 / 03期

基金：

日本学术振兴会;

关键词：

MINIMUM METALLIC CONDUCTIVITY; SILICON; SEMICONDUCTOR; INJECTION; SYSTEMS; LOGIC;

D O I：

10.1103/PhysRevApplied.2.034005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in non-degenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 mu m and spin rotation greater than 4 pi at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

引用

页数：6