Improved junction formation procedure for low temperature deposited CdS/CdTe solar cells

被引：30

作者：

Takamoto, T ^{[1
]}

Agui, T ^{[1
]}

Kurita, H ^{[1
]}

Ohmori, M ^{[1
]}

机构：

[1] JAPAN ENERGY RES CTR CO LTD,MINATO KU,TOKYO 106,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 49卷 / 1-4期

关键词：

junction formation; CdS/CdTe solar cells;

D O I：

10.1016/S0927-0248(97)00198-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin film CdS/CdTe solar cells with high efficiencies above 15% were produced by vacuum evaporation at substrate temperatures lower than 400 degrees C. The junction quality was found to be improved by introducing an In (or Sn)-oxide buffer layer on the transparent conducting oxide film, and V-oc greater than 0.84 V and FF greater than 75% could be obtained. Furthermore, the two-step CdS formation method was found to be effective for obtaining high-efficiency cells on a sodalime glass.

引用

页码：219 / 225

页数：7