Ag incorporation in low-temperature grown Cu(In,Ga)Se2 solar cells using Ag precursor layers

被引：54

作者：

Kim, Kihwan ^{[1
]}

Park, Joo Wan ^{[1
,2
]}

Yoo, Jin Su ^{[1
]}

Cho, Jun-sik ^{[1
]}

Lee, Hi-Deok ^{[2
]}

Yun, Jae Ho ^{[1
]}

机构：

[1] Korea Inst Energy Res, Photovolta Lab, Daejeon 305343, South Korea

[2] Chungnam Natl Univ, Dept Elect Engn, Daejeon 305764, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 146卷

关键词：

Photovoltaics; CIGS; Thin films; Solar cells; Chalcopyrite; ELECTRICAL-PROPERTIES; THIN-FILMS;

D O I：

10.1016/j.solmat.2015.11.028

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, with Ag alloying, we attempted to improve the microstructure and device performance of low-temperature grown Cu(In,Ga)Se-2 (CIGS) solar cells. Ag precursors with various thicknesses are deposited onto Mo prior to the CIGS growth step, and absorber films are formed via a single-step co-evaporation at a substrate temperature of 350 degrees C. The addition of Ag in low-temperature grown CIGS films induces significant recrystallization and Na incorporation. Through adjustment of the Ag content of the Ag-alloyed CIGS films, an improved device performance is obtained compared with a CIGS solar cell without Ag alloying. (C) 2015 Published by Elsevier B.V.

引用

页码：114 / 120

页数：7

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