The effects of temperature and light concentration on the GaInP/GaAs multijunction solar cell's performance

被引：32
作者：
Feteha, MY
Eldallal, GM
机构：
[1] Univ Alexandria, Inst Grad Studies & Res, Alexandria, Egypt
[2] Univ Alexandria, Fac Engn, Dept Engn Math & Phys, Alexandria 21544, Egypt
来源：
RENEWABLE ENERGY | 2003年 / 28卷 / 07期
关键词：
D O I：
10.1016/S0960-1481(02)00211-2
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Monolithic Ga0.49In0.51P/GaAs cascade solar cells, with a p(+)/n(+) GaAs tunnel junction were grown by MOCVD technique. The variation of the photovoltage, photocurrent, fill factor, efficiency, I-V characteristics and spectral response under different temperatures (25-75degreesC), and light intensity values (1-40 sun), were investigated experimentally. The open-circuit voltage of the multijunction cell decreases with the temperature increase at a rate. of 5.5 mV/degreesC. The efficiency of the cascade structure under investigation was increased with an increase in the light concentration up to a point where the series resistance and the tunnel junction effects become significant. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1097 / 1104
页数：8
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