More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

被引：37

作者：

Wu, Yinhe ^{[1
]}

Zhang, Jincheng ^{[1
]}

Zhao, Shenglei ^{[1
]}

Zhang, Weihang ^{[1
]}

Zhang, Yachao ^{[1
]}

Duan, Xiaoling ^{[1
]}

Chen, Jiabo ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 11期

关键词：

AlGaN-channel HEMTs; Schottky drain; reverse blocking; breakdown voltage; BREAKDOWN-VOLTAGE; LEAKAGE CURRENT;

D O I：

10.1109/LED.2019.2941530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, more than 3000 V reverse blockingSchottky-drainAlGaN-channelHEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage VFB (at 10 mu A/mm) is improved from 1850 2100 V to 22002600 V for LGD = 22 mu m. Due to the high breakdown electric field of AlGaN material, reverse blocking voltage V RB (at 10 mu A/mm) reaches as high as -1950 -2200 V. For HEMTs with LGD = 52 mu m, record high V FB of>3000V andV RB of>3000V havebeen achieved. The leakage current is as low as 6.06 nA/mm at V-DS = -2000 V.

引用

页码：1724 / 1727

页数：4

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More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With &gt;230 MW/cm2 Power Figure-of-Merit

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit