A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

被引：0
|
作者：
Gonzalez, M. A. [1 ]
Martinez, O. [1 ]
Jimenez, J. [1 ]
Frigeri, C. [2 ]
Weyher, J. L. [3 ]
机构：
[1] Univ Valladolid, GdS Optronlab, Dept Fis Mat Condensada, E-47011 Valladolid, Spain
[2] CNR IMEM Inst, I-43010 Parma, Italy
[3] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 06期
关键词：
GaAs; cathodoluminescence; dislocation atmospheres; BEAM-INDUCED CURRENT; IMPURITY ATMOSPHERES; DIFFUSION; DEFECTS;
D O I：
10.1007/s11664-010-1108-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dislocations in Si-doped liquid-encapsulated Czochralski GaAs crystals have been studied by spectrum imaging cathodoluminescence. The interaction between the dislocations and the crystal matrix results in complex atmospheres, which can extend several tens of micrometers around the dislocations. The formation of these atmospheres depends on the melt stoichiometry and the doping level. Different atmospheres formed during growth and postgrowth cooling were studied. Their main characteristics and possible scenarios of formation are suggested, taking account of the characteristics of the samples in terms of [As]/[Ga] ratio and doping. Excess As defects seem to play a major role in the formation of the atmospheres.
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页码：781 / 786
页数：6
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