Reduced lattice thermal conductivity in Bi-doped Mg2Si0.4Sn0.6

被引：48

作者：

Gao, Peng ^{[1
]}

Lu, Xu ^{[2
]}

Berkun, Isil ^{[3
]}

Schmidt, Robert D. ^{[1
]}

Case, Eldon D. ^{[1
]}

Hogan, Timothy P. ^{[1
,3
]}

机构：

[1] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA

[2] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[3] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 20期

关键词：

ENHANCED THERMOELECTRIC PROPERTIES;

D O I：

10.1063/1.4901178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 thermoelectric materials. It was found that the ZTs of this material could be greatly enhanced by Bi-doping. Analyses on the transport properties showed that the power factors of the material were enhanced while the lattice thermal conductivities were reduced by Bi-doping. The reduction of the lattice thermal conductivity was likely caused by the interstitial Bi impurities. A peak ZT approximate to 1.55 at 773K was obtained. (C) 2014 AIP Publishing LLC.

引用

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