High-Performance Single Nanowire Tunnel Diodes

被引：77

作者：

Wallentin, Jesper ^{[1
]}

Persson, Johan M. ^{[2
]}

Wagner, Jakob B. ^{[2
]}

Samuelson, Lars ^{[1
]}

Deppert, Knut ^{[1
]}

Borgstrom, Magnus T. ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

基金：

瑞典研究理事会;

关键词：

Nanowire; MOVPE; tunnel diode; esaki diode; solar cell; heterostructure;

D O I：

10.1021/nl903941b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

引用

页码：974 / 979

页数：6

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