Development of 230-270 nm AlGaN-Based Deep-UV LEDs

被引：36

作者：

Hirayama, Hideki ^{[1
,2
,3
,4
]}

Yatabe, Tohru ^{[5
]}

Noguchi, Norimichi ^{[5
]}

Kamata, Norihiko ^{[5
]}

机构：

[1] RIKEN, Semicond Labs, Wako, Saitama, Japan

[2] RIKEN, Adv Device Lab, Wako, Saitama, Japan

[3] RIKEN, High Power LED Team, Wako, Saitama, Japan

[4] RIKEN, Terahertz Quantum Device Team, Wako, Saitama, Japan

[5] Saitama Univ, Saitama, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN | 2010年 / 93卷 / 03期

关键词：

deep-UV LED; AlGaN; AlN; quantum well; LIGHT-EMITTING-DIODES; ULTRAVIOLET EMISSION;

D O I：

10.1002/ecj.10197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated AlGaN multi-quantum well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 227.5 to 273 nm fabricated on high-quality AlN buffers on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). We realized crack-free, thick AlN buffers on sapphire with a low threading dislocation density (TDD) and an atomically flat surface by using the ammonia (NH3) pulse-flow multilayer (ML) growth technique. We obtained single-peaked operation of an AlGaN-MQW LED with a wavelength of 227.5 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and the external quantum efficiency (EQE) of the 261- and 227.5-nm LEDs were 1.65 mW and 0.23% in room-temperature (RT) continuous-wave (CW) operation, and 0.15 mW and 0.2% in RT pulsed operation, respectively. (C) 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(3):24-33,2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10197

引用

页码：24 / 33

页数：10

共 16 条

[1] 250 nm AlGaN light-emitting diodes [J].