Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

被引：3

作者：

Hassan, Mostafa Afifi ^{[1
]}

Waseem, Aadil ^{[1
]}

Johar, Muhammad Ali ^{[1
]}

Yu, Sou Young ^{[1
]}

Lee, June Key ^{[2
]}

Ha, Jun-Seok ^{[2
]}

Ryu, Sang-Wan ^{[1
,2
]}

机构：

[1] Chonnam Natl Univ, Dept Phys, Gwangju 61186, South Korea

[2] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Gwangju 61186, South Korea

来源：

THIN SOLID FILMS | 2020年 / 694卷

基金：

新加坡国家研究基金会;

关键词：

Zinc oxide; Zinc sulfide; Type-II transition; Photoluminescence; Atomic layer deposition; BAND ALIGNMENT; ZNO NANOWIRES; PHOTOLUMINESCENCE; HETEROSTRUCTURES; PERFORMANCE; FILMS; OXIDE; TEMPERATURE; ARRAYS;

D O I：

10.1016/j.tsf.2019.137740

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO/ZnS multiple-quantum wells (MQWs) were grown on Si substrates by atomic layer deposition, and their optical properties were investigated. Light emission well below the band-to-band transition energies of constituent materials was observed, which was attributed to the type-II band alignment of ZnO/ZnS MQWs. The type-II transition showed a significant blue shift with increasing excitation power, which originated from modified band bending caused by spatial separation of electrons and holes as electrons are confined in the ZnO conduction band quantum well and holes are confined in the ZnS valence band quantum well. The conduction band offset of the ZnO/ZnS heterojunction was determined to be 1.58 eV simulated from the type-II emission of the MQWs with controlled layer thicknesses. The type-II transition provides an important opportunity to utilize visible light emission and absorption for various optical and energy harvesting devices using the ZnO/ZnS material system.

引用

页数：7

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