Transport spectroscopy of a quantum dot in a silicon-on-insulator (SOI) MOSFET

被引：0
作者：
Yu, Y. S. [1 ]
Kim, D. H.
Lee, J. D.
Park, B. -G.
Hwang, S. W.
Ahn, D.
机构：
[1] Hankyong Natl Univ, Dept Informat & Control Engn, Ansong 456749, South Korea
[2] Hankyong Natl Univ, Grad Sch Bioenvironm & Informat Technol, Ansong 456749, South Korea
[3] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea
[4] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[5] Korea Univ, Dept Elect & Comp Engn, Seoul 136075, South Korea
[6] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 50卷 / 03期
关键词：
single-electron transistor; transport spectroscopy; energy level; harmonic oscillator;
D O I：
10.3938/jkps.50.885
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels extracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation.
引用
收藏
页码：885 / 888
页数：4
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