Pure-phase Ga2O3 films were deposited on sapphire substrates by radio frequency magnetron sputtering

被引：9
作者：
Chen, Zhengwei [1 ,2 ,3 ,5 ]
Ge, Kunpeng [3 ,4 ,5 ]
Meng, Dongdong [3 ,4 ,5 ]
Chen, Xu [3 ]
机构：
[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China
[3] Beijing MIG Semicond Co Ltd, Dept Epitaxy, Beijing, Peoples R China
[4] Qingdao Binhai Univ, Coll Arts & Sci, Dept Phys, Qingdao, Peoples R China
[5] Beijing MIG Semicond Co Ltd, Beijing Univ Posts & Telecommun, Beijing, Peoples R China
来源：
MATERIALS LETTERS | 2022年 / 320卷
关键词：
Polymorph; Ga2O3; film; Pure-phase; Sapphire substrate; RF magnetron sputtering; ALPHA-GA2O3; THIN-FILMS; EPITAXIAL-GROWTH; ALPHA; BETA;
D O I：
10.1016/j.matlet.2022.132385
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial Ga2O3 films were successfully grown on sapphire substrates using RF magnetron sputtering method. XRD patterns showed that the films deposited on a-plane substrates were mixed polymorphs, the films on c-plane were pure-phase ((2) over bar 01) beta-Ga2O3, and m-, and r-planes were pure-phase (300) and (01 (1) over bar) alpha-Ga2O3, respectively. AFM and SE were measured to help determine the optimal growth conditions. The optical transmission spectra showed that the prepared Ga2O3 films on different substrate planes have a bandgap of 4.88-5.30 eV.
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页数：5
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