Magnetic Field, Temperature, and Time Controlled Manipulation of Switching Mechanism in NiO Film: Evidence of Large Magnetoconductance

被引：19

作者：

Das, S. ^{[1
]}

Majumdar, S. ^{[1
]}

Giri, S. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 14期

关键词：

THIN-FILM; MEMORY; NANOPARTICLES; NANOWIRES;

D O I：

10.1021/jp100947r

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

NiO film with similar to 83 nm average thickness is fabricated by sol-gel dip coating technique The sharp switching between low and high conducting states having a large ratio of currents (similar to 10(7)) at low temperature is observed in the NiO film We clearly demonstrate that switching effect can be tuned by controlling external parameters such as magnetic field. thermal excitation, and time duration of the applied voltage Magnetic field induced switching is involved with the extraordinary large magnetoconductance (similar to 98% at 20 K) Large magnetoconductance is significant for the spintronic applications. The resistive switching memory controlled by the external parameters associated with the signature of large magnetoconductance is fascinating for the multifunctional applications.

引用

页码：6671 / 6675

页数：5

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