DLIT- versus ILIT-based efficiency imaging of solar cells

被引：15
作者：
Fruehauf, F. [1 ]
Breitenstein, O. [1 ]
机构：
[1] Max Planck Inst Microstruct Phys, Halle, Germany
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2017年 / 169卷
关键词：
Efficiency imaging; Dark lock-in thermography; Illuminated lock-in thermography; Distributed resistance; Independent diode model; LOCK-IN THERMOGRAPHY; SATURATION CURRENT; SERIES RESISTANCE; PHOTOLUMINESCENCE; VOLTAGE; LIFETIME; IMAGES;
D O I：
10.1016/j.solmat.2017.05.015
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Efficiency imaging of solar cells means to know which region of an inhomogeneous cell contributes by which degree to the efficiency at maximum power point of the cell. This knowledge allows us to judge how strong certain defect regions influence the efficiency of the whole cell. Efficiency imaging can be performed based on dark lock-in thermography (DLIT) imaging within the model of independent diodes, or based on illuminated lock-in thermography (ILIT), which does not assume any cell model. Moreover, by 2-dimensional finite element simulation of the cell based on DLIT results, an efficiency image can be obtained, which takes into account the distributed nature of the series resistance. In this contribution these three methods are applied to one and the same multicrystalline cell containing ohmic shunts and the results are compared to each other. Conclusions to the accuracy of solely DLIT-based efficiency imaging are drawn.
引用
收藏
页码：195 / 202
页数：8
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