High sensitivity silicon single nanowire junctionless phototransistor

A high-gain photodetector based on junctionless MOSEFT has been presented in this work. Trigate junctionless nanowire phototransistors were fabricated on (100) silicon-on-insulator wafers with a buried oxide of thickness 145 nm and top silicon layer of thickness 10 nm. The gate stack consisted of a 10 nm SiO2 dielectric and a 50 nm poly-Si gate electrode. The channel length and doping concentration of junctionless n-MOSFETs was 1 mu m and 3 x 10(19) cm(-3), respectively. The dark current of this device measured at room temperature was less than 1 pA. The measured internal gain of the device was about 35 for 860 nm light illumination. The photocurrent was 300 times larger than the dark current for only 30nW incident power on the nanowire at 300mV drain bias. (C) 2016 AIP Publishing LLC.