Electroless gold deposition on silicon(100) wafer based on a seed layer of silver

被引：23

作者：

Jing, F ^{[1
]}

Tong, H ^{[1
]}

Kong, L ^{[1
]}

Wang, C ^{[1
]}

机构：

[1] Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 03期

关键词：

D O I：

10.1007/s00339-003-2236-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article describes a method of electroless gold deposition on a Si(100) wafer having a silver surface as seed layer. The seed layer was firstly deposited onto the surface of an etched wafer in an acidic solution of 0.005 mol/L AgNO3 + 0.06 mol/L HF. The electroless gold deposition is performed by immersing the Ag-activated wafer in an electroless bath with a composition of 1.27 x 10(-3) mol/L [AuCl4](-) + 2.00 x 10(-2) mol/L NaH2PO2 + 8.32 x 10(-2) mol/L NH2CH2 CH2NH2 (pH = 9.0 - 9.5). The bath temperature is 50 - 70degreesC. The morphology of the seed layer and the gold film were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).

引用

页码：597 / 600

页数：4

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