机构:
Univ SW Louisiana, Ctr Adv Comp Studies, Lafayette, LA 70504 USAUniv SW Louisiana, Ctr Adv Comp Studies, Lafayette, LA 70504 USA
Shams, AM
[1
]
Bayoumi, MA
论文数: 0引用数: 0
h-index: 0
机构:
Univ SW Louisiana, Ctr Adv Comp Studies, Lafayette, LA 70504 USAUniv SW Louisiana, Ctr Adv Comp Studies, Lafayette, LA 70504 USA
Bayoumi, MA
[1
]
机构:
[1] Univ SW Louisiana, Ctr Adv Comp Studies, Lafayette, LA 70504 USA
来源:
PROCEEDINGS OF THE 8TH GREAT LAKES SYMPOSIUM ON VLSI
|
1998年
关键词:
D O I:
10.1109/GLSV.1998.665198
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
A new low power CMOS 1-bit full adder cell is presented. It is based on recent design of XOR and XNOR gates [6], and pass-transistors, it has 17 transistors. This cell has been compared to two widely used efficient adder cells; the transmission function full adder cell (16 transistors) [2], and the low power adder cell (14 transistors) [3]. The new cell has no short circuit power and lower dynamic power (than the other adder cells), because of less number and magnitude of circuit capacitances. It consumes 10% to 15% less power than the other two cells. A comparative analysis (using Magic and Hspice) for 8-bit ripple carry and carry select adders shows that the adders based on the new cell can save up to 25% of power consumption.