Development of an integrated physical vapour deposition and chemical vapour deposition system

被引:13
作者
Mundra, S. S. [1 ]
Pardeshi, S. S. [1 ]
Bhavikatti, S. S. [1 ]
Nagras, Atul [2 ]
机构
[1] Coll Engn, Dept Mech Engn, Pune, Maharashtra, India
[2] Adv Proc Technol Pvt Ltd, Pune, Maharashtra, India
关键词
Physical vapour deposition; Chemical vapour deposition; SEM; THERMAL-CONDUCTIVITY;
D O I
10.1016/j.matpr.2021.02.069
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work consists of development of an integrated deposition system comprising Physical Vapour Deposition (PVD) and Chemical Vapour Deposition (CVD) as sub systems aimed at achieving a wide range of thin film depositions. The detailed requirements for system development were investigated, and a customized unique deposition system has been developed. The developed system can find applications to develop thin films of a range of material on various substrate materials. Certain experimentation has been conducted for graphene growth on CVD set up. Characterization has been done by optical microscope and SEM technique. An insight into experimentations suggest that process parameters like temperature, pressure of CVD chamber and mass flow rates of precursor gases act as influencing factors for the resultant uniformity and thickness of graphene growth layer. (c) 2021 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 28th International Conference on Processing and Fabrication of Advanced Materials.
引用
收藏
页码:1229 / 1234
页数:6
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