Single quantum dot spectroscopy of CdSe/ZnSe grown on vicinal GaAs substrates

被引：11

作者：

Makino, T

André, R

Gérard, JM

Romestain, R

Dang, LS

Bartels, M

Lischka, K

Schikora, D

机构：

[1] Univ Grenoble 1, CNRS, UMR 5588,Lab Spectrometrie Phys, CEA CNRS UJF Joint Grp Nanophys & Semicond, F-38402 St Martin Dheres, France

[2] CEA Grenoble, Dept Rech Fondamentale Mat Condensee SP2M, CEA CNRS UJF Joint Grp Nanophys & Semicond, F-38054 Grenoble 9, France

[3] Univ Paderborn, Dept Phys, D-33098 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1565700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the optical properties of two monolayers of CdSe sandwiched by ZnSe layers grown by molecular-beam epitaxy on GaAs substrates with a vicinal tilt of 2degrees in the [111] direction. By varying the spatial resolution from 10 mum down to 500 nm, sharp photoluminescence lines due to the recombination of excitons confined into quantum dots could be observed at low temperature. The dot density could be as low as approximate to10(9) dots/cm(2), which is smaller than previously reported values by at least one order of magnitude. (C) 2003 American Institute of Physics.

引用

页码：2227 / 2229

页数：3

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