Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

被引：13

作者：

Jayanti, Srikant ^{[1
]}

Yang, Xiangyu ^{[1
]}

Lichtenwalner, Daniel J. ^{[2
]}

Misra, Veena ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

关键词：

aluminium compounds; dielectric materials; flash memories; lanthanum compounds; silicon compounds; transmission electron microscopy; FLASH MEMORY; DEVICES; OXIDES;

D O I：

10.1063/1.3355547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique of scavenging the SiO2 interfacial layer (IL) to improve the electrical performance of Al2O3 as the interpoly dielectric for flash memories has been studied. Scavenging was performed by the reaction of a thin La2O3 layer with the native oxide to form a high-kappa lanthanum silicate. Significant improvement in the charge trapping and leakage characteristics were obtained. Transmission electron microscopy analysis was done to corroborate the electrical results. Results show that seven orders of magnitude leakage reduction was achieved by the replacement of the SiO2 IL with a higher-kappa dielectric LaSiO at the Si interface.

引用

页数：3

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