Annealing of RuO2 and Ru bottom electrodes and its effects on the electrical properties of (Ba,Sr)TiO3 thin films

被引：39

作者：

Ahn, JH

Choi, WY

Lee, WJ

Kim, HG

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Elect Ceram Mat Res Ctr, Yusong Gu, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期

关键词：

bottom electrode; RuO2; Ru; BST; annealing; evaporation; reduction; leakage current;

D O I：

10.1143/JJAP.37.284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystalline structures and surface morphologies of annealed RuO2 and Ru thin films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The annealing was performed in oxygen and argon ambient and high vacuum in the temperature range of 400-800 degrees C. In oxygen ambient annealing, the surface morphology was drastically changed due to the evaporation of ruthenium dioxides in the form of RuO3 and RuO4. Annealed RuO2 thin film in vacuum was reduced to the Ru metal phase. The actual variation of RuO2 bottom electrodes during the deposition of (Ba, Sr)TiO3 (BST) thin films and the effects of the thermal stability of bottom electrodes on electrical properties of BST thin films deposited on RuO2/SiO2/Si were also investigated.

引用

页码：284 / 289

页数：6