Photo-induced effects in chalcogenide thin films under irradiation by synchrotron light

被引：4

作者：

de Moura, P. R. ^{[1
]}

Almeida, D. P. ^{[1
]}

de Lima, J. C. ^{[1
]}

机构：

[1] Univ Fed Santa Catarina, Dept Fis, BR-88040900 Florianopolis, SC, Brazil

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2007年 / 155卷 / 1-3期

关键词：

chalcogenide thin films; photo-induced effects; photo-absorption;

D O I：

10.1016/j.elspec.2006.12.011

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We present the results of measurements of changes occurring in chalcogenide thin films of Ge30Se70 and Ga40Se60 alloys induced by photo-absorption of visible and VUV light. Emphasis is given to the description of the experimental techniques, as well as the apparatus constructed for the measurements. The Ge30Se70 and Ga40Se60 alloys, were prepared by mechanical alloying in a ball mill, deposited as a thin film on a glass substrate and exposed to synchrotron photons in the visible and ultraviolet. The dependence of the transmission of a diode laser beam was determined as a function of the radiation exposure time used. (c) 2007 Published by Elsevier B.V.

引用

页码：129 / 135

页数：7

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