Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

被引:101
|
作者
Pospischil, Andreas [1 ]
Mueller, Thomas [1 ]
机构
[1] Vienna Univ Technol, Inst Photon, A-1040 Vienna, Austria
来源
APPLIED SCIENCES-BASEL | 2016年 / 6卷 / 03期
基金
奥地利科学基金会;
关键词
optoelectronic devices; transition metal dichalcogenides; 2D materials; LIGHT-EMITTING-DIODES; P-N-JUNCTIONS; LAYER MOS2; PHOTOCURRENT GENERATION; VALLEY POLARIZATION; OPTICAL-PROPERTIES; MONOLAYER MOS2; BAND-GAP; SINGLE; EMISSION;
D O I
10.3390/app6030078
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We review the application of atomically thin transition metal dichalcogenides in optoelectronic devices. First, a brief overview of the optical properties of two-dimensional layered semiconductors is given and the role of excitons and valley dichroism in these materials are discussed. The following sections review and compare different concepts of photodetecting and light emitting devices, nanoscale lasers, single photon emitters, valleytronics devices, as well as photovoltaic cells. Lateral and vertical device layouts and different operation mechanisms are compared. An insight into the emerging field of valley-based optoelectronics is given. We conclude with a critical evaluation of the research area, where we discuss potential future applications and remaining challenges.
引用
收藏
页数:19
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