Understanding the onset of negative electronic compressibility in single-band and two-band two-dimensional electron gases: Application to LaAlO3/SrTiO3

被引：1
作者：
Mahabir, A. D. [1 ,2 ]
Balatsky, A., V [2 ,3 ]
Haraldsen, J. T. [1 ]
机构：
[1] Univ North Florida, Dept Phys, Jacksonville, FL 32224 USA
[2] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[3] NORDITA, Roslagstullsbacken 23, S-10691 Stockholm, Sweden
来源：
PHYSICAL REVIEW B | 2021年 / 103卷 / 12期
基金：
欧洲研究理事会;
关键词：
INTERFACE; ENERGY; SUPERCONDUCTIVITY; PHYSICS; GAP;
D O I：
10.1103/PhysRevB.103.125141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the effects of two electronic bands at the negative electronic compressibility (NEC) in a twodimensional electron gas (2DEG). We use a simple homogeneous model with Coulombic interactions and firstorder multiband coupling to examine the role of effective mass and relative permittivity in relation to the critical carrier density, where compressibility turns negative. We demonstrate that the population of a second band, along with the presence of interband coupling, can dramatically change the crossover carrier density. Given the difficulty in determining and confirming multiband electronic systems, this model provides a potential method for identifying multiband electronic systems using precise bulk electronic properties measurements. To help illustrate this method, we apply our results to the observed NEC in the 2DEG at the LaAlO3/SrTiO3 (LAO/STO) interface and determine that, for the known parameters of LAO/STO, the system is likely a realization of a two-band 2DEG. Furthermore, we provide general limits on the interband coupling with respect to the electronic band population.
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页数：12
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