The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra

被引：9

作者：

Balzarotti, A ^{[1
]}

Fanfoni, M ^{[1
]}

Patella, F ^{[1
]}

Arciprete, F ^{[1
]}

Placidi, E ^{[1
]}

Onida, G ^{[1
]}

Del Sole, R ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Ist Nazl Fis Mat, Dipartimento Fis, I-00133 Rome, Italy

来源：

SURFACE SCIENCE | 2003年 / 524卷 / 1-3期

关键词：

electron energy loss spectroscopy (EELS); molecular beam epitaxy; semiconducting surfaces; surface electronic phenomena (work function; surface potential; surface states; etc.); surface relaxation and reconstruction; density functional calculations; gallium arsenide;

D O I：

10.1016/S0039-6028(02)02540-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-resolution electron energy-loss measurements performed in situ on GaAS(001)-c(4 x 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：L71 / L76

页数：6

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