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Generating an electron-blocking layer with BaMn1-xNixO3 mixed-oxide for Ce0.8Sm0.2O2-δ-based solid oxide fuel cells
被引:5
作者:
Qian, Jiali
[1
]
Gong, Zheng
[2
,3
]
Wang, Meng
[1
]
Yu, Haoran
[1
]
Zhao, Tingting
[1
]
Li, Ming
[1
]
Liu, Wei
[2
,3
,4
]
Wang, Haiqian
[1
]
机构:
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Hefei 230026, Anhui, Peoples R China
[4] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Ceria-based electrolyte;
Electronic conduction;
Electron-blocking layer;
Solid oxide fuel cells;
PERFORMANCE;
ANODE;
SOFCS;
TEMPERATURE;
CE;
D O I:
10.1016/j.ceramint.2018.04.077
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Doped ceria (DCO) has high oxygen ionic conductivity, but the electronic conduction due to the reduction of Ce4+ to Ce3+ degrades its usage as an electrolyte material for solid oxide fuel cells. Inserting an electron-blocking layer is an attractive strategy to deal with this problem. In order to generate a Ba-containing electron blocking layer for DCO-based single cells, we applied BaMn1-xNixO3 (x = 0, 0.25, 0.5) mixed-oxide as an anode precursor material, and studied the solid reactions of it with NiO and SDC under the cell preparation conditions. XRD analysis indicates that the BaMn1-xNixO3 precursors are primarily BaMnO3/BaNiO3-delta mixed-oxides. It is found that BaMn1-xNixO3 reacts with SDC to form BaCeO3 and a novel Ba-2(NiMnCe)(2)O-6 double perovskite. SEM/ EDS analyses reveal that BaCeO3 tends to accumulates at the anode-electrolyte interface, as well as to fill the closed pores in the SDC electrolyte. A 4 mu m-thick electron-blocking layer with BaCeO3 as the main component effectively eliminates the internal-short-circuit and enhances the performance of the cell. The open circuit voltage and peak power density of the cell with such an electron-blocking layer are 1.010 eV and 621 mW cm(-2) respectively at 650 degrees C.
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页码:12739 / 12744
页数:6
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