Generating an electron-blocking layer with BaMn1-xNixO3 mixed-oxide for Ce0.8Sm0.2O2-δ-based solid oxide fuel cells

被引:5
作者
Qian, Jiali [1 ]
Gong, Zheng [2 ,3 ]
Wang, Meng [1 ]
Yu, Haoran [1 ]
Zhao, Tingting [1 ]
Li, Ming [1 ]
Liu, Wei [2 ,3 ,4 ]
Wang, Haiqian [1 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Hefei 230026, Anhui, Peoples R China
[4] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Ceria-based electrolyte; Electronic conduction; Electron-blocking layer; Solid oxide fuel cells; PERFORMANCE; ANODE; SOFCS; TEMPERATURE; CE;
D O I
10.1016/j.ceramint.2018.04.077
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Doped ceria (DCO) has high oxygen ionic conductivity, but the electronic conduction due to the reduction of Ce4+ to Ce3+ degrades its usage as an electrolyte material for solid oxide fuel cells. Inserting an electron-blocking layer is an attractive strategy to deal with this problem. In order to generate a Ba-containing electron blocking layer for DCO-based single cells, we applied BaMn1-xNixO3 (x = 0, 0.25, 0.5) mixed-oxide as an anode precursor material, and studied the solid reactions of it with NiO and SDC under the cell preparation conditions. XRD analysis indicates that the BaMn1-xNixO3 precursors are primarily BaMnO3/BaNiO3-delta mixed-oxides. It is found that BaMn1-xNixO3 reacts with SDC to form BaCeO3 and a novel Ba-2(NiMnCe)(2)O-6 double perovskite. SEM/ EDS analyses reveal that BaCeO3 tends to accumulates at the anode-electrolyte interface, as well as to fill the closed pores in the SDC electrolyte. A 4 mu m-thick electron-blocking layer with BaCeO3 as the main component effectively eliminates the internal-short-circuit and enhances the performance of the cell. The open circuit voltage and peak power density of the cell with such an electron-blocking layer are 1.010 eV and 621 mW cm(-2) respectively at 650 degrees C.
引用
收藏
页码:12739 / 12744
页数:6
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